Optimiranje strukture germanijskih fotodetektora sa slojem amorfnog bora

master's thesis

• Title (english): Optimization of germanium fotodetector structures with an amorphous boron layer
• Author: Lovro Marković
• Mentor: Mirko Poljak (mentor)
• Committee member: Mirko Poljak (predsjednik povjerenstva)
• Committee member: Tomislav Suligoj (član povjerenstva)
• Committee member: Marko Koričić (član povjerenstva)
• Granter: University of Zagreb; Faculty of Electrical Engineering and Computing; Zagreb
• Defense date and country: 2020-02-11, Croatia
• Scientific / art field, discipline and subdiscipline: TECHNICAL SCIENCES; Electrical Engineering

Abstract

Rad donosi analizu postojećih poluvodičkih tehnologija detekcije čestica i elektromagnetskog zračenja. Analizirane su karakteristike materijala pogodne za izgradnju specifičnih detektora (UV, IR, elektroni). Također, ispitane su i modelirane potencijalne barijere na granici metal/poluvodič te na heterospoju poluvodiča u TCAD simulacijskom softveru. Djelomično su okarakterizirana svojstva nanometarskog sloja amorfnog bora. Izgrađeni su 1D i 2D modeli diode s nanometarskim slojem amorfnog bora na površini (PureB) na siliciju i germaniju te je načinjena usporedba električkih karakteristika s karakteristikom silicijske/germanijske diode s dubokim i plitkim p+/n spojem. Formiranje graničnog sloja šupljina i potencijalne barijere na heterospojevima predloženi su kao moguće objašnjenje niskih iznosa gustoća struja zasićenja.

Abstract (english)

Analysis of existing semiconductor detectors for particle and light detection was made. Properties of different materials relevant for specific purposes (IR, UV, electrons) were described. Physical models of metal-semiconductor and hetero-interfaces were explained and used for modeling of its electrical characteristics using TCAD simulation software. Properties of a few nanometers thin layer of amorphous boron were explained. Construction of 1D and 2D models of ultra-shallow junction diode on Si/Ge with amorphous boron surface layer was performed in order to make a comparison of PureB diodes' electrical characteristics with those of deep and shallow junction Si/Ge p+/n diodes. Formation of an interface hole layer (IHL) on heterojunction and heterojunction potential barriers were proposed as a possible explanation of low values of saturation current densities.

• Keywords: Fotodetektor; PureB; PureB-on-Ge; PureB-on-Si; Heterospoj
• Keywords (english): Photodetector; PureB; Shallow; Ultra-shallow; Junction; PureB-on-Ge; PureB-on-Si; Schottky; Heterojunction; Electron; Blocking
• Language: croatian
• URN:NBN: urn:nbn:hr:168:912413
• Study programme: Title: Electrical Engineering and Information Technology; Study programme type: university; Study level: graduate; Academic / professional title: magistar/magistra inženjer/inženjerka elektrotehnike i informacijske tehnologije (magistar/magistra inženjer/inženjerka elektrotehnike i informacijske tehnologije)
• Type of resource: Text
• File origin: Born digital
• Access conditions: Closed access
• Created on: 2023-01-13 10:20:50