Projektiranje okidnog sklopa za silicij-karbid energetske module

master's thesis

• Title (english): Design of a gate driver for the silicon-carbide power modules
• Author: Domagoj Adamović
• Mentor: Marinko Kovačić (mentor)
• Committee member: Marinko Kovačić (predsjednik povjerenstva)
• Committee member: Stjepan Stipetić (član povjerenstva)
• Committee member: Zlatko Hanić (član povjerenstva)
• Granter: University of Zagreb; Faculty of Electrical Engineering and Computing; Zagreb
• Defense date and country: 2020-07-07, Croatia
• Scientific / art field, discipline and subdiscipline: TECHNICAL SCIENCES; Electrical Engineering

Abstract

Opisan je princip rada i specifičnosti upravljanja SiC MOSFET poluvodičkim sklopkama te njihove prednosti u odnosu na IGBT. SiC tehnologija pruža značajno smanjenje gubitaka te rad na većim sklopnim frekvencijama. Prikazana je struktura okidnog sklopa i funkcije koje mora zadovoljiti. Napravljen je pregled metoda galvanske izolacije signala i napajanja kao i metode zaštite sklopke. U praktičnom dijelu rada projektiran je i izrađen prototip okidnog sklopa za SiC poluvodički modul. Poluvodički modul se sastoji od dvije SiC MOSFET sklopke u jednom kućištu i predstavlja jednu fazu izmjenjivača. Sklop se bazira na komercijalno dostupnom integriranom krugu za galvansku izolaciju signala, upravljanje i zaštitu SiC MOSFET-a, a koriste se dva izlazna kanala. Koordinacija izolacije rađena je prema normama za primjenu u željezničkim sustavima. Također su provedene ispitne metode na prototipu čime je dokazana njegova funkcionalnost.

Abstract (english)

The main specifications and control requirements of SiC MOSFET semiconductor switches and their capabilities compared to IGBT are described. SiC technology enables reduction of switching losses and enables switching at higher frequencies. The structure of the gate driver and the functions that must be satisfied are shown. An overview of the methods for the galvanic isolation of signal and power supply as well as the method for the switch protection was made. In the hardware design part of the thesis, a prototype of a gate driver for a SiC semiconductor module was developed and assembled. The semiconductor module that was used consists of two SiC MOSFET switches in one housing and represents one phase of the power inverter. The designed circuit is based on a commercially available integrated gate driver for galvanic signal isolation, control and protection of the SiC MOSFET. Insulation coordination was done according to the international standard for railway applications Test methods were performed on the prototype to prove proper functionality.

• Keywords: silicij-karbid; okidni sklop; pobudni stupanj; SiC MOSFET; galvanska izolacija; koordinacija izolacije; prekostrujna zaštita
• Keywords (english): silicon carbide; gate driver; control circuit; SiC MOSFET; galvanic isolation; insulation coordination; overcurrent protection
• Language: croatian
• URN:NBN: urn:nbn:hr:168:292257
• Study programme: Title: Electrical Engineering and Information Technology; Study programme type: university; Study level: graduate; Academic / professional title: magistar/magistra inženjer/inženjerka elektrotehnike i informacijske tehnologije (magistar/magistra inženjer/inženjerka elektrotehnike i informacijske tehnologije)
• Type of resource: Text
• File origin: Born digital
• Access conditions: Closed access
• Created on: 2023-01-13 09:03:06