Design of radiation-hard CMOS sensors for particle detection applications

doctoral thesis

• Title (croatian): Projektiranje CMOS senzora otpornih na zračenje za primjenu u detekciji čestica
• Author: Ivan Berdalović
• Mentor: Tomislav Suligoj (mentor)
• Committee member: Tomislav Suligoj (član povjerenstva)
• Granter: University of Zagreb; Faculty of Electrical Engineering and Computing; (Department of Electronics, Microelectronics, Computer and Intelligent Systems); Zagreb
• Defense date and country: 2019, Croatia
• Scientific / art field, discipline and subdiscipline: TECHNICAL SCIENCES; Computing; Program Engineering
• Universal decimal classification (UDC): 621.3 - Electrical engineering

Abstract

The work focuses on the design of large-scale radiation-hard monolithic CMOS sensors for the upgrades of the detectors in the high-energy physics experiments at CERN. The sensors are manufactured using a novel process modification implemented in the TowerJazz 180 nm CMOS process, which uses small collection electrodes to achieve a low sensor capacitance in the order of a few femtofarads, resulting in low noise and low analogue power consumption. The process modification provides full depletion of the sensitive layer and a radiation hardness promising to meet the requirements of the pixel detectors in CERN’s largest experiments. The sensors implement a matrix of small pixels (in the order of 30 micrometres) containing a fast, low-noise front-end amplifier and a novel asynchronous digital readout architecture. Measurement results from these sensors before and after irradiation are also discussed.

Abstract (croatian)

Rad se bavi projektiranjem monolitnih CMOS senzora otpornih na zračenje za primjenu u detektorima u eksperimentima fizike elementarnih čestica u CERN-u. Senzori su proizvedeni u novoj modifikaciji standardnog TowerJazz 180 nm CMOS procesa te koriste male sakupljačke elektrode kako bi se postigao mali kapacitet reda veličine nekoliko femtofarada, što omogućuje niske razine šuma i nisku analognu disipaciju snage. Modifikacija procesa omogućuje potpuno osiromašenje sloja za detekciju i time otpornost na zračenje koja može ispuniti zahtjeve piksel detektora u najvećim CERN-ovim eksperimentima. Senzori sadrže matricu malih piksela (reda veličine 30 mikrometara) koji osim sakupljačke elektrode sadrže brzo niskošumno pojačalo i novu asinkronu digitalnu logiku za očitavanje podataka iz piksela. Rad će također predstaviti rezultate mjerenja na proizvedenim sklopovima prije i poslije zračenja.

• Keywords: Active pixel sensors; CMOS integrated circuits; position sensitive particle detectors; radiation effects; radiation hardening (electronics); semiconductor detectors; solid-state circuit design
• Keywords (croatian): Aktivni piksel senzori; CMOS integrirani sklopovi; detektori čestica osjetljivi na položaj; efekti zračenja; otpornost (elektronike) na zračenje; poluvodički detektori; projektiranje poluvodičkih sklopova
• Language: english
• URN:NBN: urn:nbn:hr:168:593406
• Study programme: Title: Electrical Engineering and Computing; Study programme type: university; Study level: postgraduate; Academic / professional title: Doktor znanosti elektrotehnike i računarstva (Doktor znanosti elektrotehnike i računarstva)
• Type of resource: Text
• Extent: 120 str. ; 30 cm
• File origin: Born digital
• Access conditions: Open access
• Created on: 2020-01-22 08:37:08