Visokoprecizno pojačalo za neizbrisive memorije

master's thesis

• Title (english): High Precision Sense Amplifier for Non-Volatile Memory
• Author: Ivan Porin Tolić
• Mentor: Adrijan Barić (mentor)
• Committee member: Adrijan Barić (predsjednik povjerenstva)
• Committee member: Marko Koričić (član povjerenstva)
• Committee member: Vladimir Čeperić (član povjerenstva)
• Granter: University of Zagreb; Faculty of Electrical Engineering and Computing; Zagreb
• Defense date and country: 2018-09-27, Croatia
• Scientific / art field, discipline and subdiscipline: TECHNICAL SCIENCES; Electrical Engineering

Abstract

Neizbrisive memorije koriste se u prijenosnim uređajima, ugradbenim sustavima, u memoriji za pohranu parametara za digitalnu obradu signala itd. Kako bi memorija bila korisna, potreban je parametar/svojstvo s barem dva stanja. U slučaju neizbrisivih memorija, dva logička stanja, '0' i '1', ostvarena su elementima baziranim na pohranjivanju naboja. Točnije, naboj je "zarobljen" u specifičnom dijelu tranzistora čime se mijenja određeno svojstvo elementa (tj. napon praga). Na taj način prisutstvo ili odsutstvo naboja se može detektirati. Dakle, osjetilna pojačala potrebna su za detekciju stanja memorijskih elemenata. S diferencijalnim ćelijama, dva tranzistora koriste se za jedan bit. Jedna od ćelija je programirana (naboj je "zarobljen"), dok druga je obrisana (bez naboja u plivajućoj upravljačkoj elektrodi). Dvije struje iz ćelija ulazi su osjetilnog pojačala. Glavni zadatak osjetilnog pojačala je osjetiti razilku između dviju ulaznih struja i postaviti izlazne napone na ispravne vrijednosti. Tehnologija korištena za dizajn je TSMC 180 nm. Uz različite pristupe projektiranja krugova, dobiveni su različiti rezultati u smislu brzine, površine i preciznosti.

Abstract (english)

Non-volatile memories (NVM-s) are used in portable devices, embedded
systems, in memory for storing DSP parameters etc. To have usable memory, it is required to have a detectable parameter/property with at least two states. In case of NVM, the two logic states, ’0’ and ’1’, are realized with charge-based memory devices. More precisely, the charge is "trapped" in the specific region of the transistor thus changing some property of the device (e.g. threshold voltage). This way the presence or the absence of the charges is to be sensed. Therefore, sense amplifiers are needed for detecting the states of memory devices. With the differential cells, two transistor are used for one bit. One of the cells is programmed (the charge is "trapped"), while the other is erased (without charges in the floating gate). Two currents from cells are inputs to the sense amplifier. The main task of the sense amplifier is to sense the difference between two input currents and to set the output voltages to correct values. The technology used for the design was TSMC 180 nm. Using different circuit designs, different results interms of speed, area and precision were achieved.

• Keywords: integrirani sklop; osjetilno pojačalo; neizbrisive memorije; TwinBit ćelija; simulacije; topologija; ekstrakcija parazita
• Keywords (english): integrated circuit; sense amplifier; non-volatile memories; TwinBit cell; simulations; layout; parasitic extraction
• Language: english
• URN:NBN: urn:nbn:hr:168:632054
• Study programme: Title: Electrical Engineering and Information Technology; Study programme type: university; Study level: graduate; Academic / professional title: magistar/magistra inženjer/inženjerka elektrotehnike i informacijske tehnologije (magistar/magistra inženjer/inženjerka elektrotehnike i informacijske tehnologije)
• Type of resource: Text
• File origin: Born digital
• Access conditions: Closed access
• Created on: 2019-03-14 01:33:59