Analiza niskošumnog pojačala sa silicij-germanijskim bipolarnim tranzistorima

undergraduate thesis

• Title (english): Analysis of Low-Noise Amplifier with Silicon-Germanium Heterojunction Bipolar Transistors
• Author: Martin Apro
• Mentor: Tomislav Suligoj (mentor)
• Committee member: Tomislav Suligoj (predsjednik povjerenstva)
• Committee member: Josip Žilak (član povjerenstva)
• Committee member: Željko Osrečki (član povjerenstva)
• Granter: University of Zagreb; Faculty of Electrical Engineering and Computing; Zagreb
• Defense date and country: 2017-07-12, Croatia
• Scientific / art field, discipline and subdiscipline: TECHNICAL SCIENCES; Electrical Engineering

Abstract

Niskošumno pojačalo (LNA) je elektronički uređaj koji pojačava snagu veoma slabih signala uz minimalno dodavanje šuma. Neizostavna je komponenta bežične primopredajne tehnologije upravo iz tog razloga što su signali u bežičnoj komunikaciji slabi i podložni djelovanju šuma. Dizajniranje LNA je složeni postupak koji mora uzeti više čimbenika u obzir. Glavne karakteristike niskošumnog pojačala su: razina dodanog šuma, pojačanje, stabilnost i linearnost. Poboljšanje jedne od tih karakteristika ne znači nužno poboljšanje i ostalih, već je potrebno praviti kompromise da bi se postigao optimalan sklop za određenu primjenu. Najbitnija stvar kod dizajniranja LNA je izbor tehnologije tranzistora i oblika dizajna. U ovome završnom radu pokazan je i objašnjen postupak dizajniranja jednostupanjskog niskošumnog pojačala sa silicij-germanijskim bipolarnim tranzistorom u spoju zajedničkog emitera.

Abstract (english)

A low noise amplifier (LNA) is an electronic device that amplifies the power of very weak signals with minimal noise addition. It is an indispensable component of wireless transceiver technology precisely because the signals in wireless communications are weak and susceptible to noise. LNA design is a complex process that needs to take multiple factors into account. The main characteristics of low-noise amplifiers are: noise figure, gain, stability and linearity. Improving one of these characteristics does not necessarily mean improvement in others which means compromises need to be made to achieve the optimum circuit for a particular application. The most important thing in designing LNA is the choice of transistor technology and the type of design. In this thesis, the method of designing a one-stage low-noise amplifier with a silicon-germanium bipolar transistor in a common emitter configuration is shown.

• Keywords: niskošumno pojačalo; prijamnik; silicij-germanij; tranzistor; šum; pojačanje; S-parametri; linearnost; stabilnost; statička radna točka; prilagodba impedancije
• Keywords (english): Low-noise amplifier; receiver; silicon-germanium; transistor; noise; gain; S-parameters; linearity; stability; DC bias; impedance matching
• Language: croatian
• URN:NBN: urn:nbn:hr:168:691684
• Study programme: Title: Electrical Engineering and Information Technology; Study programme type: university; Study level: undergraduate; Academic / professional title: sveučilišni/a prvostupnik/ prvostupnica (baccalaureus/baccalaurea) inženjer/inženjerka elektrotehnike i informacijske tehnologije (sveučilišni/a prvostupnik/ prvostupnica (baccalaureus/baccalaurea) inženjer/inženjerka elektrotehnike i informacijske tehnologije)
• Type of resource: Text
• File origin: Born digital
• Access conditions: Closed access
• Created on: 2019-03-13 18:39:22