Analiza visoko-frekvencijskih karakteristika FinFET struktura za komunikacijske sklopove

master's thesis

• Title (english): Analysis of high-frequency characteristics of FinFET structures for communication circuits
• Author: Hrvoje Prgić
• Mentor: Tomislav Suligoj (mentor)
• Committee member: Tomislav Suligoj (predsjednik povjerenstva)
• Committee member: Marko Koričić (član povjerenstva)
• Committee member: Mirko Poljak (član povjerenstva)
• Granter: University of Zagreb; Faculty of Electrical Engineering and Computing; Zagreb
• Defense date and country: 2014-07-11, Croatia
• Scientific / art field, discipline and subdiscipline: TECHNICAL SCIENCES; Computing
• Scientific / art field, discipline and subdiscipline: TECHNICAL SCIENCES; Electrical Engineering

Abstract

Usporedba FinFET-a s klasičnim i SOI MOSFET-om. Strukture i procesi proizvodnje modernih FinFET-a. Definicija struktura FinFET-a s litografskim dimenzijama manjim od 50 nm. Optimizacija duljine i koncentracije LDD područja te njihov utjecaj na karakteristike tranzistora. Optimizacija širine ekstenzija uvoda i odvoda. Utjecaj visine fina i zaobljenja fina na karakteristike tranzistora. Optimizacija PTS-a bulk FinFET-a. Usporedba DG i TG SOI i bulk FinFET-a. Utjecaj kvantnih efekata.

Abstract (english)

Comparison of FinFET with classic and SOI MOSFET. Structures and fabrication process of modern FinFET's. Definition of a FinFET structure with lithographic dimensions smaller than 50 nm. Optimization of the length and concentration of the LDD region and their impact on the characteristics of the transistor. Optimization of extension width of source and drain. Impact of fin height and rounding on characteristics of the transistor. Optimization of PTS for bulk FinFET. Comparison of DG and TG SOI and bulk FinFET. Impact of quantum effects.

• Keywords: efekti kratkog kanala; SOI i bulk FinFET; LDD područje; vrući nosioci; epitaksijalni rast; efekt rubova; PTS; dvostruka i trostruka upravljačka elektroda
• Keywords (english): short channel effects; SOI and bulk FinFET; LDD region; hot carriers; epitaxial growth; corner effect; PTS; double and triple gate
• Language: croatian
• URN:NBN: urn:nbn:hr:168:381134
• Study programme: Title: Electrical Engineering and Information Technology; Study programme type: university; Study level: graduate; Academic / professional title: magistar/magistra inženjer/inženjerka elektrotehnike i informacijske tehnologije (magistar/magistra inženjer/inženjerka elektrotehnike i informacijske tehnologije)
• Type of resource: Text
• File origin: Born digital
• Access conditions: Closed access
• Created on: 2018-02-06 11:26:18