Računalna analiza temperaturnih ovisnosti karakteristika bipolarnih tranzistora

master's thesis

• Title (english): Computer analysis of temperature dependence of bipolar transistor characteristics
• Author: Azra Tabaković
• Mentor: Tomislav Suligoj (mentor)
• Committee member: Tomislav Suligoj (predsjednik povjerenstva)
• Committee member: Marko Koričić (član povjerenstva)
• Committee member: Dubravko Babić (član povjerenstva)
• Granter: University of Zagreb; Faculty of Electrical Engineering and Computing; Zagreb
• Defense date and country: 2023-06-26, Croatia

Abstract

Rad se bavi proučavanjem karakteristika bipolarnih tranzistora na niskim temperaturama. Na početku su objašnjeni najvažniji efekti koji utječu na rad bipolarnih tranzistora, kao i problematika silicijskih i silicij-germanijskih bipolarnih tranzistora na niskim temperaturama. U nastavku rada naglasak je na bipolarnom tranzistoru s horizontalnim tokom struje. Odrađena je optimizacija modela tranzistora na temperaturi 300 K kako bi rezultati simulacija odgovarali mjerenim rezultatima. Drugi dio sadrži rezultate simulacija tranzistora na nižim temperaturama (do 30 K) gdje se dodatno javlja utjecaj freeze-outa nosilaca. Rezultati odstupaju od očekivanih i model je potrebno optimirati za rad na nižim temperaturama. Moguća rješenja su korištenje drugačijih modela fizikalnih efekata u simulaciji i prilagodba profila dopinga, prvenstveno baze i emitera.

Abstract (english)

The paper shows research on the characteristics of bipolar transistors at low temperatures. At the beginning, the most important effects affecting the operation of bipolar transistors and the problems of silicon and silicon-germanium bipolar transistors at low temperatures are explained. In the continuation of the work, the emphasis is on the horizontal current bipolar transistor. The simulation model of the transistor was optimized at a temperature of 300 K in order to match the simulation results with the measurements. The second part contains the results of transistor simulations at lower temperatures (up to 30 K), where the influence of carrier freeze-out appears. The results deviate from the expected and the model needs to be optimized for operation at lower temperatures. Possible solutions are the use of different models of physical effects in the simulation and adjustment of doping profiles, primarily base and emitter.

• Keywords: bipolarni tranzistor; SiGe bipolarni tranzistor; HCBT; niske temperature; strujno pojačanje; freeze-out; rekombinacija; životni vijek nosilaca; brzina rekombinacije; optimizacija
• Keywords (english): bipolar transistor; SiGe bipolar transistor; HCBT; low temperatures; current gain; freeze-out; recombination; carrier lifetime; recombination velocity; optimization
• Language: croatian
• URN:NBN: urn:nbn:hr:168:892099
• Study programme: Title: Electrical Engineering and Information Technology; Study programme type: university; Study level: graduate; Academic / professional title: magistar/magistra inženjer/inženjerka elektrotehnike i informacijske tehnologije (magistar/magistra inženjer/inženjerka elektrotehnike i informacijske tehnologije)
• Type of resource: Text
• File origin: Born digital
• Access conditions: Closed access
• Created on: 2023-07-13 10:36:51