Projektiranje niskošumnog radiofrekvencijskog pojačala s bipolarnim tranzistorima

undergraduate thesis

• Title (english): Design of radio-frequency low-noise amplifier using bipolar transistors
• Author: Marko Pavlek
• Mentor: Marko Koričić (mentor)
• Committee member: Marko Koričić (predsjednik povjerenstva)
• Committee member: Josip Žilak (član povjerenstva)
• Committee member: Željko Osrečki (član povjerenstva)
• Granter: University of Zagreb; Faculty of Electrical Engineering and Computing; Zagreb
• Defense date and country: 2020-07-15, Croatia
• Scientific / art field, discipline and subdiscipline: TECHNICAL SCIENCES; Electrical Engineering

Abstract

U ovome radu projektirana su niskošumna pojačala za radnu frekvenciju iznosa 2.4 GHz korištenjem bipolarnog tranzistora oznake BFP740 tvrtke Infineon izvedenog u tehnologiji silicij-germanij-ugljik. Ta tehnologija pokazuje bolja svojstva nego silicijski tranzistori te je pogodna za korištenje u niskošumnim pojačalima. Ulazna prilagodna mreža tranzistora projektira se za minimalni faktor šuma, a izlazna mreža za prijenos maksimalne snage. Projektiranje prilagodnih mreža izvedeno je diskretnim komponentama. Računalnim programom Advanced Design System projektirane su tri verzije niskošumnih pojačala s obzirom na izvedbu prilagodnih mreža. Mreža napajanja tranzistora projektirana je za osiguravanje stabilne statičke radne točke, ali i da signal male snage na ulazu prolazi direktno na tranzistor, a pojačani signal na izlazu direktno na trošilo. Pokazano je niskošumno pojačalo koje koristi komponente mreže napajanja za prilagodbu, postiglo je najbolje rezultate uz bezuvjetnu stabilnost kroz cijelo frekvencijsko područje te uz faktor šuma iznosa 0.796 dB i pojačanje snage iznosa 18.690 dB.

Abstract (english)

In this thesis, low-noise amplifiers were designed for operating frequency at 2.4 GHz using bipolar transistor BFP740 from Infineon company fabricated in silicon-germanium-carbon technology. This technology shows better properties than pure silicon, making it suitable for design of RF low-noise amplifiers. The input matching network of the transistor is designed for the minimum noise figure, and the output network for the maximum power transfer. The design of matching networks was performed with discrete components. Three versions of low-noise amplifiers were designed with the software Advanced Design System considering design of matching networks. The power supply network of the transistor is designed to ensure a stable operating point (Q-point), but also that the low-power signal at the input passes directly to the transistor, and the amplified signal at the output directly to the load. The low-noise amplifier that uses a power supply network for matching is shown, achieved the best results with unconditional stability through the entire frequency range with a noise figure of 0.796 dB and a power gain of 18.690 dB.

• Keywords: niskošumno pojačalo; faktor šuma; stabilnost; prilagodne mreže; realne komponente
• Keywords (english): low-noise amplifier; noise figure; stability; matching networks; real components
• Language: croatian
• URN:NBN: urn:nbn:hr:168:461372
• Study programme: Title: Electrical Engineering and Information Technology; Study programme type: university; Study level: undergraduate; Academic / professional title: sveučilišni/a prvostupnik/ prvostupnica (baccalaureus/baccalaurea) inženjer/inženjerka elektrotehnike i informacijske tehnologije (sveučilišni/a prvostupnik/ prvostupnica (baccalaureus/baccalaurea) inženjer/inženjerka elektrotehnike i informacijske tehnologije)
• Type of resource: Text
• File origin: Born digital
• Access conditions: Closed access
• Created on: 2023-01-14 09:39:59