Karakteristike bipolarnih tranzistora u režimu velikog signala

master's thesis

• Title (english): Large Signal Characteristics of Bipolar Transistors
• Author: Bruno Farkaš
• Mentor: Tomislav Suligoj (mentor)
• Committee member: Tomislav Suligoj (predsjednik povjerenstva)
• Committee member: Marko Koričić (član povjerenstva)
• Committee member: Josip Žilak (član povjerenstva)
• Granter: University of Zagreb; Faculty of Electrical Engineering and Computing; Zagreb
• Defense date and country: 2021-07-14, Croatia
• Scientific / art field, discipline and subdiscipline: TECHNICAL SCIENCES; Electrical Engineering

Abstract

Bipolarni tranzistori su poluvodički elektronički elementi koji imaju puno karakteristika koje se mogu mjeriti, istraživati i ispitivati njihove ovisnosti. Opisana je uloga tranzistora u pojačalima snage i njihovi modeli u režimima velikog i malog signala. Istražena su pojačala snage i njihove klase. Istraživanje je fokusirano na tranzistor s horizontalnim tokom struje, pa je opisana njegova struktura i koraci u proizvodnji takvog tranzistora. Postavljen je mjerni sustav za mjerenje karakteristika u režimu velikog signala za pojačalo klase A. Mjerni sustav je kalibriran da može raditi na niskim i visokim frekvencijama. Istražene su visokofrekventne karakteristike HCBT-a, prikazano je područje gdje dolazi do Kirk efekta i efekt gdje radni pravci prelaze preko proboja. Istražene su niskofrekventne karakteristike, pa zatim ovisnost karakteristika i radnih pravaca o samoj frekvenciji. Zatim su ispitane toplinske ovisnosti karakteristika i uspoređene s komercijalnim tranzistorima.

Abstract (english)

Bipolar Transistors are semiconductor electronic elements that have many characteristics that can be measured, researched, and tested for their dependencies. The role of transistors in power amplifiers and their large and small-signal models are described. Power amplifiers and their classes are explored. The research is focused on the Horizontal Current Bipolar Transistor, so structure and steps in the fabrication of such transistor are described. The measurement setup has been prepared to measure the characteristics in large-signal mode for a Class A amplifier. The measurement setup is calibrated to be able to operate at low and high frequencies. The high-frequency characteristics of HCBT are examined, the area where Kirk effect occurs and the effect where load line crosses breakdown is shown. Low-frequency characteristics are explored, followed by frequency dependence of characteristics and load lines. The thermal dependences of the characteristics are then examined and compared with commercial transistors.

• Keywords: bipolarni tranzistor; statička radna točka; radni pravac; režim velikog signala; ulazna snaga; predana snaga; frekvencija; temperatura; karakteristike
• Keywords (english): bipolar transistors; operating point; load line; large-signal mode; input power; delivered power; frequency; temperature; characteristics
• Language: croatian
• URN:NBN: urn:nbn:hr:168:353945
• Study programme: Title: Electrical Engineering and Information Technology; Study programme type: university; Study level: graduate; Academic / professional title: magistar/magistra inženjer/inženjerka elektrotehnike i informacijske tehnologije (magistar/magistra inženjer/inženjerka elektrotehnike i informacijske tehnologije)
• Type of resource: Text
• File origin: Born digital
• Access conditions: Closed access
• Created on: 2023-01-13 14:52:22