Horizontal Current Bipolar Transistor Structures for Integration with CMOS Technology

doctoral thesis

• Title (croatian): Strukture bipolarnog tranzistora s horizontalnim tokom struje za integraciju sa CMOS tehnologijom
• Author: Marko Koričić
• Mentor: Tomislav Suligoj (mentor)
• Mentor: Slavko Amon (komentor); VIAF: 306151014
• Committee member: Petar Biljanović (predsjednik povjerenstva)
• Committee member: Tomislav Suligoj (član povjerenstva)
• Committee member: Slavko Amon (član povjerenstva); VIAF: 306151014
• Committee member: Mikael Östling (član povjerenstva); VIAF: 59411185
• Committee member: Željko Butković (član povjerenstva)
• Granter: University of Zagreb; Faculty of Electrical Engineering and Computing; (Department of Electronics, Microelectronics, Computer and Intelligent Systems); Zagreb
• Defense date and country: 2008-07-03, Croatia
• Scientific / art field, discipline and subdiscipline: TECHNICAL SCIENCES; Electrical Engineering; Electronics
• Universal decimal classification (UDC): 621.3 - Electrical engineering

Abstract

Integration of HCBT structure into 0.18 μm CMOS process using the base after gate integration scheme is presented. Process is modified compared to previous HCBT technology. Standard bulk CMOS wafers with <100> orientation are used as a substrate for transistor fabrication. CMOS shallow trench isolation (STI) is used for definition of active area of the device as well as for device isolation. Transistors are made on the sidewalls defined by the STI which are exposed by masked oxide etching. Intrinsic transistor is processed on the exposed sidewall obtaining the emitter to base self-alignment. Since <100> wafers are used for the transistor fabrication crystallographic dependant etching cannot be employed for emitter polysilicon etching. Property of TMAH selectivity to native oxide is used for protection of the active transistor area at the polysilicon etching step. Transistor height is scaled approximately six times compared to previous HCBT technology. Transistors with 350 nm height and state of the art performance are successfully processed. Two novel HCBT devices are presented for the first time. Presented single polysilicon region HCBT has fT and fmax as high as 51.8 and 63.6 GHz respectively and fTBVCEO product of 155.4 GHzV. Double emitter structure uses the three dimensional charge sharing effect for improvement of breakdown voltages. Presented double emitter HCBT has common emitter breakdown voltage (BVCEO) of 15 V and Early voltage, (VA) of 141 V. All proposed HCBT structures can be fabricated in the same technological process which makes HCBT BiCMOS technology flexible and low cost BiCMOS platform for RF applications.

Abstract (croatian)

U radu je prikazana integracija HCBT strukture u 0,18 μm CMOS proces korištenjem integracijeske sheme baza nakon upravljačke elektrode. Proces je modificiran u odnosu na prethodnu HCBT tehnologiju. Za podlogu tranzistora koristi se silicijska pločica kristalne orijentacije <100> koja predstavlje standardnu podlogu za CMOS tehnologiju. CMOS izolacija plitkim žlijebom koristi se za definiciju aktivnih dijelova elemenata kao i za njihovu izolaciju. Tranzistor se procesira na bokovima silicijskih otoka definiranih izolacijom plitkim žlijebom. Bokovi se izlažu maskiranim jetkanjem oksida i na njima se procesira intrinzični tranzistor čime se dobiva samopodešavanje između emitera i baze. Pošto se koriste silicijske pločice kristalne orijentacije <100>, kristalografski osjetljivo jetkanje ne može se koristiti za jetkanje emiterskog polisilicija. Svojstvo selektivnosti TMAH-a prema prirodnom oksidu koristi se za zaštitu aktivnog tranzistora prilikom jetkanja emiterskog polisilicija. Visina tranzistora je skalirana približno šest puta u odnosu na prethodnu HCBT tehnologiju. Procesirani su tranzistori s visinom 350 nm i vrhunskim karakteristikama. Po prvi puta su predstavljene dvije nove HCBT strukture. HCBT s jednim polisilicijskim područjem ima fT i fmax iznosa čak 51,8 i 63,6 GHz i produkt fTBVCEO iznosa 155,4 GHzV. Struktura s dvostrukim emiterom koristi trodimenzionalni efekt dijeljenja naboja za postizanje visokog probojnog napona. HCBT s dvostrukim emiterom ima probojni napon u spoju zajedničkog emitera iznosa 15 V i Early-ev napon iznosa 141 V. Sve predložene strukture mogu biti proizvedene istim tehnološkim procesom što HCBT BiCMOS tehnologiju čini fleksibilnom platformom za RF primjene.

• Keywords: BiCMOS; RF; HCBT; lateral transistors; charge sharing; breakdown voltage; cutoff frequency
• Keywords (croatian): BiCMOS; RF; HCBT; lateralni tranzistori; dijeljenje naboja; probojni napon; frekvencija jediničnog strujnog pojačanja
• Language: english
• URN:NBN: urn:nbn:hr:168:405854
• Study programme: Title: Electrical Engineering and Computing; Study programme type: university; Study level: postgraduate; Academic / professional title: Doktor znanosti elektrotehnike i računarstva (Doktor znanosti elektrotehnike i računarstva)
• Type of resource: Text
• File origin: Born digital
• Access conditions: Closed access
• Created on: 2020-05-30 14:09:55