Modeliranje elektrostatike i transporta nosilaca galij-nitridnih tranzistora s visokom pokretljivosti elektrona

master's thesis

• Title (english): Modeling of electrostatics and carrier transport in galium-nitride high electron mobility transistors
• Author: Tina Petrina
• Mentor: Tomislav Suligoj (mentor)
• Committee member: Tomislav Suligoj (predsjednik povjerenstva)
• Committee member: Marko Koričić (član povjerenstva)
• Committee member: Mirko Poljak (član povjerenstva)
• Granter: University of Zagreb; Faculty of Electrical Engineering and Computing; Zagreb
• Defense date and country: 2019-07-17, Croatia
• Scientific / art field, discipline and subdiscipline: TECHNICAL SCIENCES; Electrical Engineering

Abstract

U ovom diplomskom radu naglasak je bio stavljen na strukturu tranzistora s visokom pokretljivosti elektrona kao sve upotrebljivijem poluvodičkom elementu u visokofrekvencijskoj elektronici zadnjih godina. U prvom dijelu rada objasnila se fizika same strukture - kako nastaje AlGaN/GaN heterospoj, zašto dolazi do stvaranja kvantne jame i dvodimenzionalnog elektronskog plina i sl. Potom su se objasnili različiti mehanizmi raspršenja koji će se kasnije analizirati u radu.
U idućem, drugom, dijelu rada napisane su sve korištene formule i konstante kao i kratke upute kroz kodove koji su se koristili za Schrödinger-Poissonov samokonzistentni simulator i za utjecaje različitih mehanizama raspršenja na pokretljivost elektrona zadane strukture.
U zadnjem dijelu radu prikazali su se i objasnili rezultati gore navedenih simulacija. U Schrödinger-Poisson samokonzistentnom simulatoru prikazani su promjena kvantne jame, koncentracije nosilaca i energetskih razina s obzirom na promjenu napona na upravljačkoj elektrodi za single - gate strukturu i promjenu koncentracije aluminija u Al(x)Ga(1-x)N spoju sa sto na trideset posto.

Abstract (english)

In this thesis focus was put on a structure of high electron mobility transistor as recently more used electronic device in high frequency electronics. In first part of thesis, the physics of structure was described - how AlGaN/GaN heterojunction is made, why it comes to creating of the quantum well and two dimensional electron gas, etc... Then are written different scattering mechanisms which will be later used in analyses.
In next, second part of thesis, all used and later discussed formulas, constants as well as short descriptions through program codes of Schrödinger-Poisson's self-consistent simulator and influence of scattering mechanisms on electron mobility are mentioned.
In last part of thesis, the results of above mentioned simulations are showed and analysed. In Schrödinger-Poisson's self-consistent simulator, change of quantum well, carrier concentration and energy levels are showed according to gate voltage change for a single gate structure as well as aluminium concentration change from a hundred to thirty percent in Al(x)Ga(1-x)N compound.

• Keywords: galij-nitrid; tranzistor s visokom pokretljivost elektrona; aluminij-galij-nitrid; dvodimenzionalni elektronski plin; polarizacija; heterospoj; potencijalna kvantna jama; Fermijeva energija; Schrödinger-Poissonova jednadžba; kvadratna valna funkcija; koncentracija nosilaca; energetski nivo; raspršenje elektrona; fononi; površinska hrapavost; Coulombovo raspršenje; pokretljivost elektrona
• Keywords (english): Gallium-Nitride; high electron mobility transistor; Aluminium - Gallium - Nitride; two dimensional electron gas; polarization; heterojunction; potential quantum well; Fermi's energy; Schrödinger-Poisson's equation; square wave function; carrier concentration; energy level; electron scattering; phonons; surface roughness; Coulomb scattering; electron mobility
• Language: croatian
• URN:NBN: urn:nbn:hr:168:599625
• Study programme: Title: Electrical Engineering and Information Technology; Study programme type: university; Study level: graduate; Academic / professional title: magistar/magistra inženjer/inženjerka elektrotehnike i informacijske tehnologije (magistar/magistra inženjer/inženjerka elektrotehnike i informacijske tehnologije)
• Type of resource: Text
• File origin: Born digital
• Access conditions: Closed access
• Created on: 2020-01-07 21:18:45