Grafenski tranzistori s efektom polja za visoko-frekvencijsku i fleksibilnu elektroniku

master's thesis

• Title (english): Graphene field-effect transistors for high-frequency and flexible electronics
• Author: Marijana Krivić
• Mentor: Tomislav Suligoj (mentor)
• Committee member: Tomislav Suligoj (predsjednik povjerenstva)
• Committee member: Marko Koričić (član povjerenstva)
• Committee member: Mirko Poljak (član povjerenstva)
• Granter: University of Zagreb; Faculty of Electrical Engineering and Computing; Zagreb
• Defense date and country: 2019-07-08, Croatia
• Scientific / art field, discipline and subdiscipline: TECHNICAL SCIENCES; Electrical Engineering

Abstract

Trenutačno, kao materijal za visoko-frekvencijsku i fleksibilnu elektroniku, grafen je najbolji izbor. Cilj ovog diplomskog rada motiviran je nedavno razvijenim terahertznim detektorom na plastici baziranom na grafenu koji je omogućio prvi heterodinski prijemnik baziran na grafenu. Ključne komponente ovakvog prijemnika trebale bi biti pod prednaponom. Takav način rada neizbježno unosi popriličnu količinu Jouleove topline koja, zbog intrinzično niske termalne vodljivosti fleksibilnih substrata, ugrožava učinak tranzistora.

U ovom radu, GFET-ovi na krutom (Si/SiO2) te na flexibilnom (Kapton) substratu su dizajnirani, izrađeni i okarakterizirani. Nekolicina problema u njihovoj izradi je prodiskutirana. Jouleova toplina izrađenih tranzistora je analizirana putem termalnog snimanja i termo-senzitivnih električnih parametara. Nekolicina modela za zagrijavanje MOSFETa je razmotrena sa svrhom pronalaska onog koji bi najbolje odgovarao modeliranju zagrijavanja u GFET-ovima s ciljem optimiziranja njihovog dizajna. Također, utjecaj zagrijavanja na visoko-frekvencijski performans izrađenih tranzistora je analiziran.

Abstract (english)

Graphene seems to currently be a material of choice for the high-frequency flexible electronics. The objective of this Master’s thesis has been motivated by the recently developed graphene - based terahertz detector on plastics which gave ground for the first graphene based flexible heterodyne receiver. Key components of such a receiver would need to be based. This mode of work unavoidably introduces a substantial amount of Joule heating which, due to the inherent low thermal conductivity of flexible substrates, causes performance issues.

In this work, graphene field-effect transistors (GFETs) on rigid (Si/SiO2) and flexible polymer (Kapton) substrates have been designed, fabricated and characterised. Some of the issues related to the fabrication of GFETs on flexible substrates have been overviewed and discussed. Joule heating of the fabricated devices has been analysed via thermal imaging and thermo-sensitive electric parameters (TSEPs). A number of MOSFET heating models have been considered for the purpose of determining the one applicable for modelling of Joule heating in GFETs with the aim for optimisation of their design with regards to heating management. Finally, heating effect on the high frequency performance of the fabricated devices has been analysed.

• Keywords: grafenski tranzistori s efektom polja; Jouleova toplina; visoko-frekvencijska fleksibilna elektronika; termalno snimanje; termo-senzitivni električni parametri; Kapton
• Keywords (english): graphene field-effect transistors; Joule heating; high-frequency; flexible electronics; thermal imaging; thermo-sensitive electric parameters; Kapton
• Language: english
• URN:NBN: urn:nbn:hr:168:743169
• Study programme: Title: Electrical Engineering and Information Technology; Study programme type: university; Study level: graduate; Academic / professional title: magistar/magistra inženjer/inženjerka elektrotehnike i informacijske tehnologije (magistar/magistra inženjer/inženjerka elektrotehnike i informacijske tehnologije)
• Type of resource: Text
• File origin: Born digital
• Access conditions: Closed access
• Created on: 2020-01-07 19:25:19