prikaz prve stranice dokumenta Electron transport in ultra-thin strained InGaAs MOS devices
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doctoral thesis
Electron transport in ultra-thin strained InGaAs MOS devices

University of Zagreb
Faculty of Electrical Engineering and Computing
Department of Electronics, Microelectronics, Computer and Intelligent Systems

Cite this document

Krivec, S. (2018). Electron transport in ultra-thin strained InGaAs MOS devices (Doctoral thesis). Retrieved from https://urn.nsk.hr/urn:nbn:hr:168:651466

Krivec, Sabina. "Electron transport in ultra-thin strained InGaAs MOS devices." Doctoral thesis, University of Zagreb, Faculty of Electrical Engineering and Computing, 2018. https://urn.nsk.hr/urn:nbn:hr:168:651466

Krivec, Sabina. "Electron transport in ultra-thin strained InGaAs MOS devices." Doctoral thesis, University of Zagreb, Faculty of Electrical Engineering and Computing, 2018. https://urn.nsk.hr/urn:nbn:hr:168:651466

Krivec, S. (2018). 'Electron transport in ultra-thin strained InGaAs MOS devices', Doctoral thesis, University of Zagreb, Faculty of Electrical Engineering and Computing, accessed 19 September 2020, https://urn.nsk.hr/urn:nbn:hr:168:651466

Krivec S. Electron transport in ultra-thin strained InGaAs MOS devices [Doctoral thesis]. Zagreb: University of Zagreb, Faculty of Electrical Engineering and Computing; 2018 [cited 2020 September 19] Available at: https://urn.nsk.hr/urn:nbn:hr:168:651466

S. Krivec, "Electron transport in ultra-thin strained InGaAs MOS devices", Doctoral thesis, University of Zagreb, Faculty of Electrical Engineering and Computing, Zagreb, 2018. Available at: https://urn.nsk.hr/urn:nbn:hr:168:651466

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