Pouzdanost bipolarnog tranzistora s horizontalnim tokom struje

undergraduate thesis

• Title (english): Reliabilty of Horizontal Current Bipolar Transistor
• Author: Filip Šegmanović
• Mentor: Tomislav Suligoj (mentor)
• Committee member: Tomislav Suligoj (predsjednik povjerenstva)
• Committee member: Tihomir Knežević (član povjerenstva)
• Committee member: Josip Žilak (član povjerenstva)
• Granter: University of Zagreb; Faculty of Electrical Engineering and Computing; Zagreb
• Defense date and country: 2014-09-03, Croatia
• Scientific / art field, discipline and subdiscipline: TECHNICAL SCIENCES; Electrical Engineering

Abstract

Bipolarni tranzisotri imaju danas široku primjenu u području mikro i nano tehnologije te je potrebno voditi računa o promjeni njihovih performansi tokom godina. Kada se mjeri pouzdanost tranzistora, promatra se utjecaj promjene (povećanja) struje baze, te istodobno (kao posljedica povećanja struje baze) degradacija statičkog faktora strujnog pojačanja. Pouzdanost se mjeri dvjema metodama, mixed - mode i reverse metodom stresiranja. Razlika je u različitim parametrima koji se namjeste kako bi se ispravno obavila stresiranja. Testovi stresiranja se provode u određenim vremenskim intervalima, u ovom slučaju: bez dovođenja stresa, nakon 30 sekundi, 100, 300, 1000 i 3000 sekundi. Rezultati se prikazuju Gummelovim krivuljama na kojima se vidi odnos struje baze i kolektora o naponu spoja baza - emiter, te promjenu struje baze i degradaciju pojačanja u odnosu o vremenu provođenja stresa.

Abstract (english)

Bipolar transistors today have a wide application in the field of micro and nano technology and it's important to take account of the changes of their performances over the years. When measuring the reliability of the transistor, we take into account the impact of change (increase) in the base current, and at the same time (as a consequence of the increased base current) the degradation of static current gain factor. The reliability is measured in two different methods, mixed – mode method and reverse method of stressing. The difference is in the different parameters that were adjusted in order to properly do the stressing. Stressing tests are conducted at certain time intervals, in this case: without stressing, after 30, 100, 300, 1000 and finally after 3000 seconds of stressing. Results are displayed by creating Gummel plots that show the relationship of the base current and the collector current compared to the voltage of base – emitter circuit, and the change of base current and degradation compared to the increase of stress time.

• Keywords: bipolarni tranzistor; HCBT; pouzdanost tranzistora; degradacija; stresiranje; mixed - mode stress metoda; reverse stress metoda
• Keywords (english): bipolar transistor; HCBT; reliability of transistor; degradation; stressing; mixed - mode stress method; reverse stress method
• Language: croatian
• URN:NBN: urn:nbn:hr:168:334765
• Study programme: Title: Electrical Engineering and Information Technology; Study programme type: university; Study level: undergraduate; Academic / professional title: sveučilišni/a prvostupnik/ prvostupnica (baccalaureus/baccalaurea) inženjer/inženjerka elektrotehnike i informacijske tehnologije (sveučilišni/a prvostupnik/ prvostupnica (baccalaureus/baccalaurea) inženjer/inženjerka elektrotehnike i informacijske tehnologije)
• Type of resource: Text
• File origin: Born digital
• Access conditions: Closed access
• Created on: 2018-02-06 07:24:28