Sklopovska analiza integriranog galvanski odvojenog upravljačkog sklopa za snažne tranzistore izvedenog u 0,18 mikrometarskoj visokonaponskoj tehnologiji CMOS

master's thesis

• Title (english): Circuit analysis of an integrated galvanically isolated gate driver circuit designed in 0.18-um high-voltage CMOS technology
• Author: Filip Hormot
• Mentor: Adrijan Barić (mentor)
• Committee member: Adrijan Barić (predsjednik povjerenstva)
• Committee member: Igor Krois (član povjerenstva)
• Committee member: Marko Koričić (član povjerenstva)
• Granter: University of Zagreb; Faculty of Electrical Engineering and Computing; Zagreb
• Defense date and country: 2017-07-12, Croatia
• Scientific / art field, discipline and subdiscipline: TECHNICAL SCIENCES; Electrical Engineering

Abstract

Prekapčanje tranzistora velikih snaga dovodi do stvaranja neželjenih elektromagnetskih smetnji. Galvanski izolirani upravljački krug je osmišljen i analiziran. Upravljački signal (PWM) moduliran je RF signalom i odašiljan na izlaz putem elektromagnetskog sprežnika koji galvanski odvaja izlaz od ulaza sklopa. Na izlazu sklopa RF signal je ispravljen te je rekonstruiran PWM signal. Sklopovska analiza upravljačkog sklopa je izvršena. Funkcionalnost sklopa, naponske i vremenske karakteristike su prikazane.

Abstract (english)

Switching in high-power transistors leads to unwanted electromagnetic (EM) interference. A galvanically isolated gate driver circuit with the drive-by-microwave technology is developed and analysed. A driving signal (PWM) is modulated with a RF signal and transmitted via an EM butterfly coupler which galvanivally isolates the output from the device input. At the device output, the RF signal is rectified and the PWM signal is reconstructed. The circuit analysis of the system is performed. The functionality of device stages, voltage and timing characteristics are presented.

• Keywords: Power transistors; electromagnetic interference; gate driver; electromagnetic coupler; ispravljanje RF signala
• Keywords (english): Snažni tranzistori; elektromagnetske smetnje; upravljački sklop; elektromagnetski sprežnik; RF rectification
• Language: english
• URN:NBN: urn:nbn:hr:168:762812
• Study programme: Title: Electrical Engineering and Information Technology; Study programme type: university; Study level: graduate; Academic / professional title: magistar/magistra inženjer/inženjerka elektrotehnike i informacijske tehnologije (magistar/magistra inženjer/inženjerka elektrotehnike i informacijske tehnologije)
• Type of resource: Text
• File origin: Born digital
• Access conditions: Closed access
• Created on: 2019-03-13 20:49:47